Paper Titles

A Dual-Metal-Trench Schottky Pinch-Rectifier in 4H SiC
p.945

Characterization of Power MESFETs on 4h-SiC Conductive and Semi-Insulating Wafers
p.949

Silicon Carbide MESFET's for High-Power S-Band Applications
p.953

Temperature Dependent Small- and Large-Signal Performance of 4H-SiC MESFET's
p.957

Voltage Handling Capability and Microwave Performance of a 4H-SiC MESFET - A Simulation Study
p.961

Evaluating the Three Common SiC Polytypes for MESFET Applications
p.965

Effect of Device Temperature on RF FET Power Density
p.969

Theoretical Investigation of the Electrical Behavior of SiC MESFETs for Microwave Power Amplification
p.973

MESFETs and MOSFETs on Hydrogen-Terminated Diamond Surfaces
p.977

HomeMaterials Science ForumMaterials Science Forum Vols. 264-268Voltage Handling Capability and Microwave...

Voltage Handling Capability and Microwave Performance of a 4H-SiC MESFET - A Simulation Study

Article Preview

Abstract:

You might also be interested in these eBooks

Silicon Carbide, III-Nitrides and Related Materials

Info:

Periodical:

Materials Science Forum (Volumes 264-268)

Pages:

961-964

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.264-268.961

Citation:

Cite this paper

Online since:

February 1998

Authors:

V. Khemka, T. Paul Chow, Ronald J. Gutmann

Keywords:

MESFET, Microwave Devices, Simulation

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

© 1998 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation: