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HomeMaterials Science ForumMaterials Science Forum Vols. 264-268Differences between Interfacial Bonding Chemistry...

Differences between Interfacial Bonding Chemistry at SiC-SiO₂ Interfaces Prepared by Low-Temperature Remote Plasma-Assisted Oxidation and High Temperature Conventional Thermal Oxidation

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Periodical:

Materials Science Forum (Volumes 264-268)

Pages:

1021-1024

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.264-268.1021

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Online since:

February 1998

Authors:

G. Lucovsky, Hideaki Niimi

Keywords:

Auger Electron Spectroscopy (AES), Interface Formation, Oxidation Rates, Plasma Assisted Oxidaton, Thermal Oxidation

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© 1998 Trans Tech Publications Ltd. All Rights Reserved

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