Differences between Interfacial Bonding Chemistry at SiC-SiO2 Interfaces Prepared by Low-Temperature Remote Plasma-Assisted Oxidation and High Temperature Conventional Thermal Oxidation

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Periodical:

Materials Science Forum (Volumes 264-268)

Edited by:

G. Pensl, H. Morkoç, B. Monemar and E. Janzén

Pages:

1021-1024

DOI:

10.4028/www.scientific.net/MSF.264-268.1021

Citation:

G. Lucovsky and H. Niimi, "Differences between Interfacial Bonding Chemistry at SiC-SiO2 Interfaces Prepared by Low-Temperature Remote Plasma-Assisted Oxidation and High Temperature Conventional Thermal Oxidation", Materials Science Forum, Vols. 264-268, pp. 1021-1024, 1998

Online since:

February 1998

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$35.00

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