Nanosecond Risetime Pulse Characterization of SiC p+n Junction Diode Breakdown and Switching Properties

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Periodical:

Materials Science Forum (Volumes 264-268)

Edited by:

G. Pensl, H. Morkoç, B. Monemar and E. Janzén

Pages:

1037-1040

DOI:

10.4028/www.scientific.net/MSF.264-268.1037

Citation:

P. G. Neudeck and C. Fazi, "Nanosecond Risetime Pulse Characterization of SiC p+n Junction Diode Breakdown and Switching Properties", Materials Science Forum, Vols. 264-268, pp. 1037-1040, 1998

Online since:

February 1998

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