Paper Titles

Differences between Interfacial Bonding Chemistry at SiC-SiO₂ Interfaces Prepared by Low-Temperature Remote Plasma-Assisted Oxidation and High Temperature Conventional Thermal Oxidation
p.1021

Fast Generation-Recombination Channels due to Epitaxial Defects in SiC Metal-Oxide-Semiconductor Devices
p.1025

6H-SiC MOS Capacitors on Sloped Surfaces: Realisation, Characterisation and Electrical Results
p.1029

Computer Model Simulation of SiC Diode Reverse-Bias Instabilities due to Deep Energy Impurity Levels
p.1033

Nanosecond Risetime Pulse Characterization of SiC p⁺n Junction Diode Breakdown and Switching Properties
p.1037

Reverse Recovery and Avalanche Injection in High Voltage SiC PIN Diodes
p.1041

Comparison between Aluminium and Boron-Doped Junction Termination Extensions for High Voltage 6H-SiC Planar Bipolar Diodes
p.1045

Beryllium-Implanted 6H-SiC P⁺N Junctions
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Investigation of Excess Carrier Distributions in 4H-SiC Power Diodes under Static Conditions and Turn-On
p.1053

HomeMaterials Science ForumMaterials Science Forum Vols. 264-268Nanosecond Risetime Pulse Characterization of SiC...

Nanosecond Risetime Pulse Characterization of SiC p⁺n Junction Diode Breakdown and Switching Properties

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Periodical:

Materials Science Forum (Volumes 264-268)

Pages:

1037-1040

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.264-268.1037

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Online since:

February 1998

Authors:

Philip G. Neudeck, C. Fazi

Keywords:

Bulk Recombination, Minority Carrier Lifetime, pn Junction Diode, Rectifier, Reverse Breakdown, Reverse Recovery, Solid-State Power Devices, Surface Recombination

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© 1998 Trans Tech Publications Ltd. All Rights Reserved

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