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6H-SiC MOS Capacitors on Sloped Surfaces: Realisation, Characterisation and Electrical Results
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Computer Model Simulation of SiC Diode Reverse-Bias Instabilities due to Deep Energy Impurity Levels
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Nanosecond Risetime Pulse Characterization of SiC p⁺n Junction Diode Breakdown and Switching Properties
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Reverse Recovery and Avalanche Injection in High Voltage SiC PIN Diodes
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Comparison between Aluminium and Boron-Doped Junction Termination Extensions for High Voltage 6H-SiC Planar Bipolar Diodes
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Beryllium-Implanted 6H-SiC P⁺N Junctions
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Investigation of Excess Carrier Distributions in 4H-SiC Power Diodes under Static Conditions and Turn-On
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SiC Merged p-n/Schottky Rectifiers for High Voltage Applications
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Junction Barrier Schottky Diodes in 4H-SiC and 6H-SiC
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HomeMaterials Science ForumMaterials Science Forum Vols. 264-268Comparison between Aluminium and Boron-Doped...

Comparison between Aluminium and Boron-Doped Junction Termination Extensions for High Voltage 6H-SiC Planar Bipolar Diodes

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Periodical:

Materials Science Forum (Volumes 264-268)

Pages:

1045-1048

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.264-268.1045

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Online since:

February 1998

Authors:

S. Ortolland, Marie Laure Locatelli, Dominique Planson, Jean-Pierre Chante, A. Senes

Keywords:

Junction Termination Extension (JTE), Peripheral Protection, Power Diodes

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© 1998 Trans Tech Publications Ltd. All Rights Reserved

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