Comparison between Aluminium and Boron-Doped Junction Termination Extensions for High Voltage 6H-SiC Planar Bipolar Diodes

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Periodical:

Materials Science Forum (Volumes 264-268)

Edited by:

G. Pensl, H. Morkoç, B. Monemar and E. Janzén

Pages:

1045-1048

Citation:

S. Ortolland et al., "Comparison between Aluminium and Boron-Doped Junction Termination Extensions for High Voltage 6H-SiC Planar Bipolar Diodes", Materials Science Forum, Vols. 264-268, pp. 1045-1048, 1998

Online since:

February 1998

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