Investigation of Excess Carrier Distributions in 4H-SiC Power Diodes under Static Conditions and Turn-On

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Periodical:

Materials Science Forum (Volumes 264-268)

Edited by:

G. Pensl, H. Morkoç, B. Monemar and E. Janzén

Pages:

1053-1056

DOI:

10.4028/www.scientific.net/MSF.264-268.1053

Citation:

O. Tornblad et al., "Investigation of Excess Carrier Distributions in 4H-SiC Power Diodes under Static Conditions and Turn-On", Materials Science Forum, Vols. 264-268, pp. 1053-1056, 1998

Online since:

February 1998

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$35.00

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