High Temperature Performance of Implanted-Gate n-Channel JFETs in 6H-SiC

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Periodical:

Materials Science Forum (Volumes 264-268)

Edited by:

G. Pensl, H. Morkoç, B. Monemar and E. Janzén

Pages:

1077-1080

DOI:

10.4028/www.scientific.net/MSF.264-268.1077

Citation:

S.T. Sheppard et al., "High Temperature Performance of Implanted-Gate n-Channel JFETs in 6H-SiC", Materials Science Forum, Vols. 264-268, pp. 1077-1080, 1998

Online since:

February 1998

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$35.00

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