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HomeMaterials Science ForumMaterials Science Forum Vols. 264-268High Temperature Performance of Implanted-Gate...

High Temperature Performance of Implanted-Gate n-Channel JFETs in 6H-SiC

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Periodical:

Materials Science Forum (Volumes 264-268)

Pages:

1077-1080

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.264-268.1077

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Online since:

February 1998

Authors:

S.T. Sheppard, V. Lauer, W. Wondrak, E. Niemann

Keywords:

High-Temperature, Ion Implantation, Junction Field Effect Transistor (JFET), Monolithic

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© 1998 Trans Tech Publications Ltd. All Rights Reserved

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