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HomeMaterials Science ForumMaterials Science Forum Vols. 264-268Electrical Characteristics of a Novel Gate...

Electrical Characteristics of a Novel Gate Structure 4H-SiC Power Static Induction Transistor

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Periodical:

Materials Science Forum (Volumes 264-268)

Pages:

1085-1088

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.264-268.1085

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Online since:

February 1998

Authors:

T. Iwasaki, T. Oono, Katsunori Asano, Yoshitaka Sugawara, Tsutomu Yatsuo

Keywords:

Power Device, Silicon Carbide (SiC), Static Induction Transistor

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© 1998 Trans Tech Publications Ltd. All Rights Reserved

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