Paper Titles

SiC Surface Engineering for High Voltage JFET Applications
p.1081

Electrical Characteristics of a Novel Gate Structure 4H-SiC Power Static Induction Transistor
p.1085

Studies of the Ambient Dependent Inversion of Catalytic Metal - Oxide - Silicon Carbide Devices Based on 6H- and 4H-SiC Material
p.1089

SiC-Based Schottky Diode Gas Sensors
p.1093

Electrical Characterization of Chemical Sensors Based on Catalytic Metal Gate - Silicon Carbide Schottky Diodes
p.1097

High Temperature Piezoresistive β-SiC-on-SOI Pressure Sensor for Combustion Engines
p.1101

Growth of Bulk GaN by Sublimation Method
p.1107

Growth and Characterization of Thin Films and Patterned Substrates of III-V Nitrides on SiC (0001) Substrates
p.1111

Heteroepitaxy of Group III Nitrides for Device Applications
p.1115

HomeMaterials Science ForumMaterials Science Forum Vols. 264-268Electrical Characterization of Chemical Sensors...

Electrical Characterization of Chemical Sensors Based on Catalytic Metal Gate - Silicon Carbide Schottky Diodes

Article Preview

Abstract:

You might also be interested in these eBooks

Silicon Carbide, III-Nitrides and Related Materials

Info:

Periodical:

Materials Science Forum (Volumes 264-268)

Pages:

1097-1100

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.264-268.1097

Citation:

Cite this paper

Online since:

February 1998

Authors:

Peter Tobias, Shinji Nakagomi, A. Baranzahi, R. Zhu, Ingemar Lundström, P. Mårtensson, Anita Lloyd Spetz

Keywords:

Barrier Height, Gas Sensor, Ideality Factor, Interfacial Layer, Schottky Diode

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

© 1998 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation: