Paper Titles

Electrical Characterization of Chemical Sensors Based on Catalytic Metal Gate - Silicon Carbide Schottky Diodes
p.1097

High Temperature Piezoresistive β-SiC-on-SOI Pressure Sensor for Combustion Engines
p.1101

Growth of Bulk GaN by Sublimation Method
p.1107

Growth and Characterization of Thin Films and Patterned Substrates of III-V Nitrides on SiC (0001) Substrates
p.1111

Heteroepitaxy of Group III Nitrides for Device Applications
p.1115

HVPE GaN and AIGaN 'Substrates' for Homoepitaxy
p.1121

Some Features of a Nucleation Layer Growth Process and its Influence on the GaN Epilayer Quality
p.1125

Formation of GaN Nano-Column Structure by Nitridation
p.1129

Growth of High Quality AIN Epitaxial Films by Hot-Wall Chemical Vapour Deposition
p.1133

HomeMaterials Science ForumMaterials Science Forum Vols. 264-268Heteroepitaxy of Group III Nitrides for Device...

Heteroepitaxy of Group III Nitrides for Device Applications

Article Preview

Abstract:

You might also be interested in these eBooks

Silicon Carbide, III-Nitrides and Related Materials

Info:

Periodical:

Materials Science Forum (Volumes 264-268)

Pages:

1115-1120

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.264-268.1115

Citation:

Cite this paper

Online since:

February 1998

Authors:

Hiroshi Amano, T. Takeuchi, Hiroshi Sakai, S. Yamaguchi, C. Wetzel, Isamu Akasaki

Keywords:

Buffer Layer, Gallium Nitride (GaN), Grazing Incidence X-Ray Diffraction, In Situ Transmission Electron Microscope (TEM), Strain and Relaxation

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

© 1998 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation: