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HomeMaterials Science ForumMaterials Science Forum Vols. 264-268Some Features of a Nucleation Layer Growth Process...

Some Features of a Nucleation Layer Growth Process and its Influence on the GaN Epilayer Quality

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Periodical:

Materials Science Forum (Volumes 264-268)

Pages:

1125-1128

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.264-268.1125

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Online since:

February 1998

Authors:

W.V. Lundin, A.S. Usikov, B.V. Pushnyi, U.I. Ushakov, M.V. Stepanov, N.M. Shmidt, A.V. Sakharov, Yu.M. Zadiranov, S.M. Suturin, V. Busov

Keywords:

Adducts Formation, MOCVD, Nucleation Layer, Precursors Decomposition

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© 1998 Trans Tech Publications Ltd. All Rights Reserved

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