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HomeMaterials Science ForumMaterials Science Forum Vols. 264-268HVPE GaN and AIGaN 'Substrates' for Homoepitaxy

HVPE GaN and AIGaN 'Substrates' for Homoepitaxy

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Periodical:

Materials Science Forum (Volumes 264-268)

Pages:

1121-1124

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.264-268.1121

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Online since:

February 1998

Authors:

Yu.V. Melnik, A.E. Nikolaev, S. Stepanov, I. Kikitina, Konstantin Vassilevski, A. Ankudinov, Yu. Musikhin, Vladimir Dmitriev

Keywords:

Bulk Crystals, Epitaxy, HVPE, Strain, Substrate, Surface, X-Ray Diffraction (XRD)

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© 1998 Trans Tech Publications Ltd. All Rights Reserved

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