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HomeMaterials Science ForumMaterials Science Forum Vols. 264-268

Materials Science Forum Vols. 264-268

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.264-268

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Table of Contents

Paper Title Page

Evaluating the Three Common SiC Polytypes for MESFET Applications

Authors: M. Roschke, F. Schwierz, G. Paasch, D. Schipanski

965

Effect of Device Temperature on RF FET Power Density

Authors: C. Weitzel, L. Pond, K. Moore, M. Bhatnagar

969

Theoretical Investigation of the Electrical Behavior of SiC MESFETs for Microwave Power Amplification

Authors: F. Schwierz, M. Roschke, J.J. Liou, G. Paasch

973

MESFETs and MOSFETs on Hydrogen-Terminated Diamond Surfaces

Authors: K. Tsugawa, A. Hokazono, Hiroshi Noda, K. Kitatani, Koichiro Morita, Hiroshi Kawarada

977

On the Interpretation of High-Frequency Capacitance Data of SiC MOS Structures: The Effect of Thermal Non-Equilibrium

Authors: M. Sadeghi, B. Liss, E.Ö. Sveinbjörnsson, O. Engström

981

Charge Pumping Measurements on SiC MOSFETs

Authors: Charles Scozzie, J.M. McGarrity

985

1400 V 4H-SiC Power MOSFETs

Authors: Anant K. Agarwal, Jeff B. Casady, L.B. Rowland, W.F. Valek, C.D. Brandt

989

High Voltage Planar 6H-SiC ACCUFET

Authors: P.M. Shenoy, B.J. Baliga

993

Inversion Layer Mobility in SiC MOSFETs

Authors: S. Sridevan, B.J. Baliga

997

Dependence of Channel Mobility on the Surface Step in Orientation in Planar 6H-SiC MOSFETs

Authors: Sigo Scharnholz, E. Stein von Kamienski, A. Gölz, C. Leonhard, H. Kurz

1001