Volumes

Materials Science Forum
Vols. 284-286

Materials Science Forum
Vols. 282-283

Materials Science Forum
Vols. 278-281

Materials Science Forum
Vols. 276-277

Materials Science Forum
Vols. 273-275

Materials Science Forum
Vols. 269-272

Materials Science Forum
Vols. 264-268

Materials Science Forum
Vols. 258-263

Materials Science Forum
Vols. 255-257

Materials Science Forum
Vols. 251-254

Materials Science Forum
Vol. 250

Materials Science Forum
Vols. 248-249

Materials Science Forum
Vol. 247

HomeMaterials Science ForumMaterials Science Forum Vols. 264-268

Materials Science Forum Vols. 264-268

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.264-268

Export:

ToC:

Table of Contents

Paper Title Page

Etching Kinetics of α-SiC Single Crystals by Molten KOH

Authors: Masakazu Katsuno, Noboru Ohtani, J. Takahashi, Hirokatsu Yashiro, M. Kanaya, S. Shinoyama

837

Deep States in SiO₂/p-Type 4H-SiC Interface

Authors: Hiroshi Yano, N. Inoue, Tsunenobu Kimoto, Hiroyuki Matsunami

841

Effects of the Cooling-Off Condition on the Oxidation Process in 6H-SiC

Authors: Katsunori Ueno

845

Effect of Post-Metal Annealing on the Quality of Thermally Grown Silicon Dioxide on 6H- and 4H-SiC

Authors: J. Campi, Y. Shi, Yan Bin Luo, Feng Yan, Young-Kook Lee, Jian Hui Zhao

849

Low Interface State Density Oxides on P-Type SiC

Authors: Lori A. Lipkin, D.B. Slater, Jr., John W. Palmour

853

Observation of Carbon Clusters at the 4H-SiC/SiO₂ Interface

Authors: Valeri V. Afanas'ev, Andre Stesmans, Chris I. Harris

857

Interface State Density at Implanted 6H SiC/SiO₂ MOS Structures

Authors: M. Bassler, Valeri V. Afanas'ev, Gerhard Pensl

861

Electrical Properties and Reliability of Vapor Jet Deposited Oxide on SiC

Authors: Xie Wen Wang, Yasutaka Takahashi, T.P. Ma, G.J. Cui, T. Tamagawa, B. Halpern, J.J. Schmitt

865

Improving SiO₂ Grown on P-Type 4H-SiC by NO Annealing

Authors: H.-F. Li, Sima Dimitrijev, H.B. Harrison, D. Sweatman, P.T. Tanner

869

Rapid Anodic Oxidation of 6H-SiC

Authors: Yuri I. Khlebnikov, V. Madangarli, M.A. Khan, Tangali S. Sudarshan

873