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Low Interface State Density Oxides on P-Type SiC
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Observation of Carbon Clusters at the 4H-SiC/SiO₂ Interface
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Interface State Density at Implanted 6H SiC/SiO₂ MOS Structures
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Electrical Properties and Reliability of Vapor Jet Deposited Oxide on SiC
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HomeMaterials Science ForumMaterials Science Forum Vols. 264-268Observation of Carbon Clusters at the 4H-SiC/SiO2...

Observation of Carbon Clusters at the 4H-SiC/SiO₂ Interface

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Periodical:

Materials Science Forum (Volumes 264-268)

Pages:

857-860

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.264-268.857

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Online since:

February 1998

Authors:

Valeri V. Afanas'ev, Andre Stesmans, Chris I. Harris

Keywords:

Interface, Oxidation, Scanning Probe Microscopy

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© 1998 Trans Tech Publications Ltd. All Rights Reserved

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