Deep States in SiO2/p-Type 4H-SiC Interface

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Periodical:

Materials Science Forum (Volumes 264-268)

Edited by:

G. Pensl, H. Morkoç, B. Monemar and E. Janzén

Pages:

841-844

DOI:

10.4028/www.scientific.net/MSF.264-268.841

Citation:

H. Yano et al., "Deep States in SiO2/p-Type 4H-SiC Interface", Materials Science Forum, Vols. 264-268, pp. 841-844, 1998

Online since:

February 1998

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$35.00

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