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HomeMaterials Science ForumMaterials Science Forum Vols. 264-268Deep States in SiO2/p-Type 4H-SiC Interface

Deep States in SiO₂/p-Type 4H-SiC Interface

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Periodical:

Materials Science Forum (Volumes 264-268)

Pages:

841-844

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.264-268.841

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Online since:

February 1998

Authors:

Hiroshi Yano, N. Inoue, Tsunenobu Kimoto, Hiroyuki Matsunami

Keywords:

Deep Interface States, Fixed Charges, High Frequency C-V Characteristics, Light Illumination Effects, MOS, Thermal Oxidation

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© 1998 Trans Tech Publications Ltd. All Rights Reserved

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