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HomeMaterials Science ForumMaterials Science Forum Vols. 264-268Effect of Post-Metal Annealing on the Quality of...

Effect of Post-Metal Annealing on the Quality of Thermally Grown Silicon Dioxide on 6H- and 4H-SiC

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Periodical:

Materials Science Forum (Volumes 264-268)

Pages:

849-852

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.264-268.849

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Online since:

February 1998

Authors:

J. Campi, Y. Shi, Yan Bin Luo, Feng Yan, Young-Kook Lee, Jian Hui Zhao

Keywords:

Annealing, Effective Fixed Charge Density, Interface States (or Traps), MOS Structure, Silicon Carbide (SiC), SiO₂/SiC Interface, Thermal Oxidation

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© 1998 Trans Tech Publications Ltd. All Rights Reserved

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