Effect of Post-Metal Annealing on the Quality of Thermally Grown Silicon Dioxide on 6H- and 4H-SiC

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Periodical:

Materials Science Forum (Volumes 264-268)

Edited by:

G. Pensl, H. Morkoç, B. Monemar and E. Janzén

Pages:

849-852

DOI:

10.4028/www.scientific.net/MSF.264-268.849

Citation:

J. Campi et al., "Effect of Post-Metal Annealing on the Quality of Thermally Grown Silicon Dioxide on 6H- and 4H-SiC", Materials Science Forum, Vols. 264-268, pp. 849-852, 1998

Online since:

February 1998

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