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Paper Titles
Effects of the Cooling-Off Condition on the Oxidation Process in 6H-SiC
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Effect of Post-Metal Annealing on the Quality of Thermally Grown Silicon Dioxide on 6H- and 4H-SiC
p.849
Low Interface State Density Oxides on P-Type SiC
p.853
Observation of Carbon Clusters at the 4H-SiC/SiO2 Interface
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Interface State Density at Implanted 6H SiC/SiO2 MOS Structures
p.861
Electrical Properties and Reliability of Vapor Jet Deposited Oxide on SiC
p.865
Improving SiO2 Grown on P-Type 4H-SiC by NO Annealing
p.869
Rapid Anodic Oxidation of 6H-SiC
p.873
Comparison of SiO2 and AIN as Gate Dielectric for SiC MOS Structures
p.877

Interface State Density at Implanted 6H SiC/SiO2 MOS Structures

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Abstract:

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Periodical:

Materials Science Forum (Volumes 264-268)

Pages:

861-864

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.264-268.861

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Online since:

February 1998

Authors:

M. Bassler, Valeri V. Afanas'ev, Gerhard Pensl

Keywords:

Interface States (or Traps), Ion Implantation, MOS

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© 1998 Trans Tech Publications Ltd. All Rights Reserved

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