Improving SiO2 Grown on P-Type 4H-SiC by NO Annealing

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Periodical:

Materials Science Forum (Volumes 264-268)

Edited by:

G. Pensl, H. Morkoç, B. Monemar and E. Janzén

Pages:

869-872

DOI:

10.4028/www.scientific.net/MSF.264-268.869

Citation:

H.-F. Li et al., "Improving SiO2 Grown on P-Type 4H-SiC by NO Annealing", Materials Science Forum, Vols. 264-268, pp. 869-872, 1998

Online since:

February 1998

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$35.00

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