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HomeMaterials Science ForumMaterials Science Forum Vols. 264-268Improving SiO2 Grown on P-Type 4H-SiC by NO...

Improving SiO₂ Grown on P-Type 4H-SiC by NO Annealing

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Periodical:

Materials Science Forum (Volumes 264-268)

Pages:

869-872

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.264-268.869

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Online since:

February 1998

Authors:

H.-F. Li, Sima Dimitrijev, H.B. Harrison, D. Sweatman, P.T. Tanner

Keywords:

C-V Characteristics, Interface States (or Traps), Nitridation, Oxide, Oxide Charge

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© 1998 Trans Tech Publications Ltd. All Rights Reserved

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