Comparison of SiO2 and AIN as Gate Dielectric for SiC MOS Structures

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Periodical:

Materials Science Forum (Volumes 264-268)

Edited by:

G. Pensl, H. Morkoç, B. Monemar and E. Janzén

Pages:

877-880

DOI:

10.4028/www.scientific.net/MSF.264-268.877

Citation:

C. M. Zetterling et al., "Comparison of SiO2 and AIN as Gate Dielectric for SiC MOS Structures", Materials Science Forum, Vols. 264-268, pp. 877-880, 1998

Online since:

February 1998

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$35.00

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