Paper Titles

Interface State Density at Implanted 6H SiC/SiO₂ MOS Structures
p.861

Electrical Properties and Reliability of Vapor Jet Deposited Oxide on SiC
p.865

Improving SiO₂ Grown on P-Type 4H-SiC by NO Annealing
p.869

Rapid Anodic Oxidation of 6H-SiC
p.873

Comparison of SiO₂ and AIN as Gate Dielectric for SiC MOS Structures
p.877

Metal-Nitride-Semiconductor Capacitors on 6H-SiC
p.881

Surface Micromachining of Polycrystalline SiC Deposited on SiO₂ by APCVD
p.885

Behaviour of Polycrystalline SiC and Si Surface-Micromachined Lateral Resonant Structures at Elevated Temperatures
p.889

Recent Advances in SiC Power Devices
p.895

HomeMaterials Science ForumMaterials Science Forum Vols. 264-268Comparison of SiO2 and AIN as Gate Dielectric for...

Comparison of SiO₂ and AIN as Gate Dielectric for SiC MOS Structures

Article Preview

Abstract:

You might also be interested in these eBooks

Silicon Carbide, III-Nitrides and Related Materials

Info:

Periodical:

Materials Science Forum (Volumes 264-268)

Pages:

877-880

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.264-268.877

Citation:

Cite this paper

Online since:

February 1998

Authors:

Carl Mikael Zetterling, Mikael Östling, Chris I. Harris, Nils Nordell, K. Wongchotigul, Michael G. Spencer

Keywords:

Aluminum Nitride (AlN), Metal Organic Chemical Vapour Deposition, Silicon Dioxide, Thermal Oxidation

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

© 1998 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation: