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Paper Titles
Observation of Carbon Clusters at the 4H-SiC/SiO2 Interface
p.857
Interface State Density at Implanted 6H SiC/SiO2 MOS Structures
p.861
Electrical Properties and Reliability of Vapor Jet Deposited Oxide on SiC
p.865
Improving SiO2 Grown on P-Type 4H-SiC by NO Annealing
p.869
Rapid Anodic Oxidation of 6H-SiC
p.873
Comparison of SiO2 and AIN as Gate Dielectric for SiC MOS Structures
p.877
Metal-Nitride-Semiconductor Capacitors on 6H-SiC
p.881
Surface Micromachining of Polycrystalline SiC Deposited on SiO2 by APCVD
p.885
Behaviour of Polycrystalline SiC and Si Surface-Micromachined Lateral Resonant Structures at Elevated Temperatures
p.889
HomeMaterials Science ForumMaterials Science Forum Vols. 264-268Rapid Anodic Oxidation of 6H-SiC

Rapid Anodic Oxidation of 6H-SiC

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Periodical:

Materials Science Forum (Volumes 264-268)

Pages:

873-876

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.264-268.873

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Online since:

February 1998

Authors:

Yuri I. Khlebnikov, V. Madangarli, M.A. Khan, Tangali S. Sudarshan

Keywords:

Anodic Oxidation, Gate-Oxide, MOS Capacitor

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© 1998 Trans Tech Publications Ltd. All Rights Reserved

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