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HomeMaterials Science ForumMaterials Science Forum Vols. 264-268Inductively Coupled Plasma Etching of SiC for...

Inductively Coupled Plasma Etching of SiC for Power Switching Device Fabrication

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Periodical:

Materials Science Forum (Volumes 264-268)

Pages:

833-836

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.264-268.833

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Online since:

February 1998

Authors:

Li Hui Cao, B. Li, Jian Hui Zhao

Keywords:

Dry Etching, Inductively Coupled Plasma, Surface Damage, Thyristor

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© 1998 Trans Tech Publications Ltd. All Rights Reserved

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