Fast and Anisotropic Reactive Ion Etching of 4H and 6H SiC in NF3

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Periodical:

Materials Science Forum (Volumes 264-268)

Edited by:

G. Pensl, H. Morkoç, B. Monemar and E. Janzén

Pages:

829-832

DOI:

10.4028/www.scientific.net/MSF.264-268.829

Citation:

V. Saxena and A.J. Steckl, "Fast and Anisotropic Reactive Ion Etching of 4H and 6H SiC in NF3", Materials Science Forum, Vols. 264-268, pp. 829-832, 1998

Online since:

February 1998

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$35.00

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