A High Temperature Stable Metallization Scheme for SiC-Technology Operating at 400°C in Air
p.795
p.795
Phase Formation Sequence of Nickel Silicides from Rapid Thermal Annealing of Ni on 4H-SiC
p.799
p.799
Thermal Stability of Sputtered TiN as Metal Gate on 4H-SiC
p.805
p.805
Schottky Barrier Height in Metal-SiC Contact - New Approach to Modelling
p.809
p.809
Nanometer-Scale Investigation of Schottky Contacts and Conduction Band Structure on 4H-, 6H- and 15R-SiC Using Ballistic Electron Emission Microscopy
p.813
p.813
Physical and Electrical Characterization of WN Schottky Contacts on 4H-SiC
p.817
p.817
Sputter-Etching as a Surface Preparation Technique for Schottky Contacts
p.821
p.821
Mechanism of Reactive Ion Etching of 6H-SiC in CHF3/O2 Gas Mixtures
p.825
p.825
Fast and Anisotropic Reactive Ion Etching of 4H and 6H SiC in NF3
p.829
p.829
Nanometer-Scale Investigation of Schottky Contacts and Conduction Band Structure on 4H-, 6H- and 15R-SiC Using Ballistic Electron Emission Microscopy
Abstract:
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Periodical:
Materials Science Forum (Volumes 264-268)
Pages:
813-816
Citation:
Online since:
February 1998
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Сopyright:
© 1998 Trans Tech Publications Ltd. All Rights Reserved
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