Nanometer-Scale Investigation of Schottky Contacts and Conduction Band Structure on 4H-, 6H- and 15R-SiC Using Ballistic Electron Emission Microscopy

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Periodical:

Materials Science Forum (Volumes 264-268)

Edited by:

G. Pensl, H. Morkoç, B. Monemar and E. Janzén

Pages:

813-816

DOI:

10.4028/www.scientific.net/MSF.264-268.813

Citation:

H. J. Im et al., "Nanometer-Scale Investigation of Schottky Contacts and Conduction Band Structure on 4H-, 6H- and 15R-SiC Using Ballistic Electron Emission Microscopy", Materials Science Forum, Vols. 264-268, pp. 813-816, 1998

Online since:

February 1998

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