Volumes

Materials Science Forum
Vols. 284-286

Materials Science Forum
Vols. 282-283

Materials Science Forum
Vols. 278-281

Materials Science Forum
Vols. 276-277

Materials Science Forum
Vols. 273-275

Materials Science Forum
Vols. 269-272

Materials Science Forum
Vols. 264-268

Materials Science Forum
Vols. 258-263

Materials Science Forum
Vols. 255-257

Materials Science Forum
Vols. 251-254

Materials Science Forum
Vol. 250

Materials Science Forum
Vols. 248-249

Materials Science Forum
Vol. 247

HomeMaterials Science ForumMaterials Science Forum Vols. 264-268

Materials Science Forum Vols. 264-268

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.264-268

Export:

ToC:

Table of Contents

Paper Title Page

A High Temperature Stable Metallization Scheme for SiC-Technology Operating at 400°C in Air

Authors: K. Gottfried, H. Fritsche, J. Kriz, J. Leibelt, C. Kaufmann, F. Rudolf, T. Gessner

795

Phase Formation Sequence of Nickel Silicides from Rapid Thermal Annealing of Ni on 4H-SiC

Authors: Lynnette D. Madsen, Erik B. Svedberg, H.H. Radamson, Christer Hallin, B. Hjörvarsson, C. Cabral, J.L. Jordan-Sweet, C. Lavoie

799

Thermal Stability of Sputtered TiN as Metal Gate on 4H-SiC

Authors: Erik Danielsson, Chris I. Harris, Carl Mikael Zetterling, Mikael Östling

805

Schottky Barrier Height in Metal-SiC Contact - New Approach to Modelling

Authors: Pavel A. Ivanov, K.I. Ignat'ev

809

Nanometer-Scale Investigation of Schottky Contacts and Conduction Band Structure on 4H-, 6H- and 15R-SiC Using Ballistic Electron Emission Microscopy

Authors: Hyoung Jin Im, B. Kaczer, J.P. Pelz, Jin Ming Chen, Wolfgang J. Choyke

813

Physical and Electrical Characterization of WN Schottky Contacts on 4H-SiC

Authors: Olivier Noblanc, C. Arnodof, S. Cassette, Christian Brylinski, A. Kakanakova-Georgieva, Ts. Marinova, Liliana Kassamakova, R. Kabanakov, Béla Pécz, A. Sulyok, György Z. Radnóczi

817

Sputter-Etching as a Surface Preparation Technique for Schottky Contacts

Authors: Shin Ichi Kinouchi, Hiroshi Sugimoto, Yoichiro Tarui, Kenichi Ohtsuka, Tetsuya Takami, Tatsuo Ozeki

821

Mechanism of Reactive Ion Etching of 6H-SiC in CHF₃/O₂ Gas Mixtures

Authors: N. Sieber, Jürgen Ristein, Lothar Ley

825

Fast and Anisotropic Reactive Ion Etching of 4H and 6H SiC in NF₃

Authors: V. Saxena, A.J. Steckl

829

Inductively Coupled Plasma Etching of SiC for Power Switching Device Fabrication

Authors: Li Hui Cao, B. Li, Jian Hui Zhao

833