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HomeMaterials Science ForumMaterials Science Forum Vols. 264-268

Materials Science Forum Vols. 264-268

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.264-268

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Table of Contents

Paper Title Page

Raman Determination of Stresses and Strains in 3C-SiC Films Grown on 6-Inch Si Substrates

Authors: C. Hagiwara, Kohei M. Itoh, J. Muto, Hiroyuki Nagasawa, Kuniaki Yagi, Hiroshi Harima, K. Mizoguchi, Shinichi Nakashima

669

Conductivity Control of SiC by In-Situ Doping and Ion Implantation

Authors: Tsunenobu Kimoto, A. Itoh, N. Inoue, O. Takemura, T. Yamamoto, T. Nakajima, Hiroyuki Matsunami

675

Incorporation of the D-Center in SiC Controlled either by Coimplantation of Si/B and C/B or by Site-Competition Epitaxy

Authors: Thomas Frank, T. Troffer, Gerhard Pensl, Nils Nordell, S. Karlsson, Adolf Schöner

681

Coimplantation Effects on the Electrical Properties of Boron and Aluminium Acceptors in 4H-SiC

Authors: Hisayoshi Itoh, T. Troffer, Gerhard Pensl

685

Electrical Characterization of p-Type 6H-SiC Layers Created by C and Al Co-implantation

Authors: Kiyoshi Tone, S.R. Weiner, Jian Hui Zhao

689

Effects of Al-C Ion-Implantation and Annealing in Epitaxial 6H-SiC Studied by Structural and Optical Techniques

Authors: Zhe Chuan Feng, Ian T. Ferguson, R.A. Stall, K. Li, Y. Shi, H. Singh, Kiyoshi Tone, Jian Hui Zhao, A.T.S. Wee, K.L. Tan, F. Adar, B. Lenain

693

Energy Order Effect of Aluminium Multiple Implantation in 6H-SiC

Authors: Laurent Ottaviani, Erwan Morvan, Marie Laure Locatelli, Philippe Godignon, Jean-Pierre Chante

697

Implantation of Al and B Acceptors into Alpha-SiC and pn Junction Diodes

Authors: O. Takemura, Tsunenobu Kimoto, Hiroyuki Matsunami, Toshitake Nakata, Masanori Watanabe, M. Inoue

701

Electrical Activation of B Implant in 6H-SiC

Authors: E. Valcheva, T. Paskova, I.S. Ivanov, Rositza Yakimova, Qamar-ul Wahab, Susan Savage, Nils Nordell, Chris I. Harris

705

Post-Implantation Annealing of Aluminium in 6H-SiC

Authors: Laurent Ottaviani, Dominique Planson, Marie Laure Locatelli, Jean-Pierre Chante, B. Canut, S. Ramos

709