Effects of Al-C Ion-Implantation and Annealing in Epitaxial 6H-SiC Studied by Structural and Optical Techniques

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Periodical:

Materials Science Forum (Volumes 264-268)

Edited by:

G. Pensl, H. Morkoç, B. Monemar and E. Janzén

Pages:

693-696

DOI:

10.4028/www.scientific.net/MSF.264-268.693

Citation:

Z. C. Feng et al., "Effects of Al-C Ion-Implantation and Annealing in Epitaxial 6H-SiC Studied by Structural and Optical Techniques", Materials Science Forum, Vols. 264-268, pp. 693-696, 1998

Online since:

February 1998

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