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Coimplantation Effects on the Electrical Properties of Boron and Aluminium Acceptors in 4H-SiC
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Electrical Characterization of p-Type 6H-SiC Layers Created by C and Al Co-implantation
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Effects of Al-C Ion-Implantation and Annealing in Epitaxial 6H-SiC Studied by Structural and Optical Techniques
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Energy Order Effect of Aluminium Multiple Implantation in 6H-SiC
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Implantation of Al and B Acceptors into Alpha-SiC and pn Junction Diodes
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HomeMaterials Science ForumMaterials Science Forum Vols. 264-268Effects of Al-C Ion-Implantation and Annealing in...

Effects of Al-C Ion-Implantation and Annealing in Epitaxial 6H-SiC Studied by Structural and Optical Techniques

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Periodical:

Materials Science Forum (Volumes 264-268)

Pages:

693-696

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.264-268.693

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Online since:

February 1998

Authors:

Zhe Chuan Feng, Ian T. Ferguson, R.A. Stall, K. Li, Y. Shi, H. Singh, Kiyoshi Tone, Jian Hui Zhao, A.T.S. Wee, K.L. Tan, F. Adar, B. Lenain

Keywords:

6H-SiC, Annealing, FT-IR, Ion Implantation, Raman Scattering, SIMS, X-Ray Diffraction (XRD)

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© 1998 Trans Tech Publications Ltd. All Rights Reserved

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