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Electrical Characterization of p-Type 6H-SiC Layers Created by C and Al Co-implantation
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Effects of Al-C Ion-Implantation and Annealing in Epitaxial 6H-SiC Studied by Structural and Optical Techniques
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Energy Order Effect of Aluminium Multiple Implantation in 6H-SiC
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Implantation of Al and B Acceptors into Alpha-SiC and pn Junction Diodes
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Electrical Activation of B Implant in 6H-SiC
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Post-Implantation Annealing of Aluminium in 6H-SiC
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The Characterization of SiC Hot-Implanted with Ga ⁺
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Ion Implantation Doping in SiC and its Device Applications
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Hot-Implantation of Phosphorus Ions into 6H-SiC
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HomeMaterials Science ForumMaterials Science Forum Vols. 264-268Electrical Activation of B Implant in 6H-SiC

Electrical Activation of B Implant in 6H-SiC

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Periodical:

Materials Science Forum (Volumes 264-268)

Pages:

705-708

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.264-268.705

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Online since:

February 1998

Authors:

E. Valcheva, T. Paskova, I.S. Ivanov, Rositza Yakimova, Qamar-ul Wahab, Susan Savage, Nils Nordell, Chris I. Harris

Keywords:

Boron, C-V, Electrical Activation, Ion Implantation, TRIM Simulation

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© 1998 Trans Tech Publications Ltd. All Rights Reserved

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