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HomeMaterials Science ForumMaterials Science Forum Vols. 264-268Post-Implantation Annealing of Aluminium in 6H-SiC

Post-Implantation Annealing of Aluminium in 6H-SiC

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Periodical:

Materials Science Forum (Volumes 264-268)

Pages:

709-712

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.264-268.709

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Online since:

February 1998

Authors:

Laurent Ottaviani, Dominique Planson, Marie Laure Locatelli, Jean-Pierre Chante, B. Canut, S. Ramos

Keywords:

Annealing Atmosphere, Ion Implantation, RBS/Channeling, Surface Stoichiometry

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© 1998 Trans Tech Publications Ltd. All Rights Reserved

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