Incorporation of the D-Center in SiC Controlled either by Coimplantation of Si/B and C/B or by Site-Competition Epitaxy
p.681
p.681
Coimplantation Effects on the Electrical Properties of Boron and Aluminium Acceptors in 4H-SiC
p.685
p.685
Electrical Characterization of p-Type 6H-SiC Layers Created by C and Al Co-implantation
p.689
p.689
Effects of Al-C Ion-Implantation and Annealing in Epitaxial 6H-SiC Studied by Structural and Optical Techniques
p.693
p.693
Energy Order Effect of Aluminium Multiple Implantation in 6H-SiC
p.697
p.697
Implantation of Al and B Acceptors into Alpha-SiC and pn Junction Diodes
p.701
p.701
Electrical Activation of B Implant in 6H-SiC
p.705
p.705
Post-Implantation Annealing of Aluminium in 6H-SiC
p.709
p.709
The Characterization of SiC Hot-Implanted with Ga +
p.713
p.713
Energy Order Effect of Aluminium Multiple Implantation in 6H-SiC
Abstract:
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Periodical:
Materials Science Forum (Volumes 264-268)
Pages:
697-700
Citation:
Online since:
February 1998
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© 1998 Trans Tech Publications Ltd. All Rights Reserved
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