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The Characterization of SiC Hot-Implanted with Ga ⁺
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Ion Implantation Doping in SiC and its Device Applications
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Hot-Implantation of Phosphorus Ions into 6H-SiC
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HomeMaterials Science ForumMaterials Science Forum Vols. 264-268The Characterization of SiC Hot-Implanted with Ga...

The Characterization of SiC Hot-Implanted with Ga ⁺

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Periodical:

Materials Science Forum (Volumes 264-268)

Pages:

713-716

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.264-268.713

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Online since:

February 1998

Authors:

Yasuhito Tanaka, Naoto Kobayashi, Mitsuru Hasegawa, Sadafumi Yoshida, Yuuki Ishida, T. Nishijima, N. Hayashi

Keywords:

Gallium, Hot Implantation, RBS/Channeling, Recrystallization RX

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© 1998 Trans Tech Publications Ltd. All Rights Reserved

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