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HomeMaterials Science ForumMaterials Science Forum Vols. 264-268Investigation of Ion-Impantation Induced Damage in...

Investigation of Ion-Impantation Induced Damage in 6H-SiC by RSB/C and PAS

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Periodical:

Materials Science Forum (Volumes 264-268)

Pages:

729-732

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.264-268.729

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Online since:

February 1998

Authors:

H. Wirth, W. Anwand, Gerhard Brauer, M. Voelskow, D. Panknin, Wolfgang Skorupa, Paul G. Coleman

Keywords:

Ion Implantation, Positron Annihilation Spectroscopy, Radiation Damage, RBS, Substrate Temperature

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© 1998 Trans Tech Publications Ltd. All Rights Reserved

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