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HomeMaterials Science ForumMaterials Science Forum Vols. 264-2686H-SiC Crystallinity Behaviour upon B Implantation...

6H-SiC Crystallinity Behaviour upon B Implantation Studied by Raman Scattering

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Periodical:

Materials Science Forum (Volumes 264-268)

Pages:

741-744

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.264-268.741

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Online since:

February 1998

Authors:

T. Paskova, E. Valcheva, Ivan G. Ivanov, Rositza Yakimova, Susan Savage, Nils Nordell, Chris I. Harris

Keywords:

Boron, Ion Implantation, Lattice Damage, Raman Scattering, Recovery, TRIM Simulation

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© 1998 Trans Tech Publications Ltd. All Rights Reserved

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