6H-SiC Crystallinity Behaviour upon B Implantation Studied by Raman Scattering

Abstract:

Article Preview

Info:

Periodical:

Materials Science Forum (Volumes 264-268)

Edited by:

G. Pensl, H. Morkoç, B. Monemar and E. Janzén

Pages:

741-744

Citation:

T. Paskova et al., "6H-SiC Crystallinity Behaviour upon B Implantation Studied by Raman Scattering", Materials Science Forum, Vols. 264-268, pp. 741-744, 1998

Online since:

February 1998

Export:

Price:

$38.00