Study of Thermal Annealing of Vacancies in Ion Implanted 3C-SiC by Positron Annihilation

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Periodical:

Materials Science Forum (Volumes 264-268)

Edited by:

G. Pensl, H. Morkoç, B. Monemar and E. Janzén

Pages:

745-748

DOI:

10.4028/www.scientific.net/MSF.264-268.745

Citation:

T. Ohshima et al., "Study of Thermal Annealing of Vacancies in Ion Implanted 3C-SiC by Positron Annihilation", Materials Science Forum, Vols. 264-268, pp. 745-748, 1998

Online since:

February 1998

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