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HomeMaterials Science ForumMaterials Science Forum Vols. 264-268Study of Thermal Annealing of Vacancies in Ion...

Study of Thermal Annealing of Vacancies in Ion Implanted 3C-SiC by Positron Annihilation

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Periodical:

Materials Science Forum (Volumes 264-268)

Pages:

745-748

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.264-268.745

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Online since:

February 1998

Authors:

Takeshi Ohshima, Akira Uedono, Hisayoshi Itoh, L. Bouwhuis, Ryoichi Suzuki, Toshiyuki Ohdaira, Y. Aoki, Masahito Yoshikawa, Tomohisa Mikado, Hajime Okumura, Sadafumi Yoshida, Shoichiro Tanigawa, Isamu Nashiyama

Keywords:

Annealing, Ion Implantation, Positron Annihilation, Vacancy Type Defects

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© 1998 Trans Tech Publications Ltd. All Rights Reserved

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