Paper Titles

6H-SiC Crystallinity Behaviour upon B Implantation Studied by Raman Scattering
p.741

Study of Thermal Annealing of Vacancies in Ion Implanted 3C-SiC by Positron Annihilation
p.745

Effect of Hot Isostatic Press Annealing for Ion-Implanted Silicon Carbide
p.749

Ion Beam Synthesis: A Novel Method of Producing (SiC)_1-x(AIN)_x Layers
p.753

A Computational Model for the Formation of (SiC)_1-x(AIN)_x Structures by Hot, High-Dose N⁺ and Al⁺ Co-Implants in 6H-SiC
p.757

Deuterium Incorpoation in Acceptor Doped Epitaxial Layers of 6H-SiC
p.761

Silicon Carbide on Insulator Formation by the Smart CUT^® Process
p.765

Delamination of Thin Layers in H⁺ Implanted Silicon Carbide
p.771

Metal Disilicide Contacts to 6H-SiC
p.775

HomeMaterials Science ForumMaterials Science Forum Vols. 264-268A Computational Model for the Formation of...

A Computational Model for the Formation of (SiC)_1-x(AIN)_x Structures by Hot, High-Dose N⁺ and Al⁺ Co-Implants in 6H-SiC

Article Preview

Abstract:

You might also be interested in these eBooks

Silicon Carbide, III-Nitrides and Related Materials

Info:

Periodical:

Materials Science Forum (Volumes 264-268)

Pages:

757-760

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.264-268.757

Citation:

Cite this paper

Online since:

February 1998

Authors:

Yu.V. Truschin, R.A. Yankov, V.S. Kharlamov, D.V. Kulikov, D.N. Tsigankov, U. Kreissig, M. Voelskow, Joerg Pezoldt, Wolfgang Skorupa

Keywords:

Computer Simulation, Defect Production, Ion Beam Synthesis, Kinetics of Defects

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

© 1998 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation: