A Computational Model for the Formation of (SiC)1-x(AIN)x Structures by Hot, High-Dose N+ and Al+ Co-Implants in 6H-SiC

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Periodical:

Materials Science Forum (Volumes 264-268)

Edited by:

G. Pensl, H. Morkoç, B. Monemar and E. Janzén

Pages:

757-760

DOI:

10.4028/www.scientific.net/MSF.264-268.757

Citation:

Y.V. Truschin et al., "A Computational Model for the Formation of (SiC)1-x(AIN)x Structures by Hot, High-Dose N+ and Al+ Co-Implants in 6H-SiC", Materials Science Forum, Vols. 264-268, pp. 757-760, 1998

Online since:

February 1998

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$35.00

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