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A Computational Model for the Formation of (SiC)_1-x(AIN)_x Structures by Hot, High-Dose N⁺ and Al⁺ Co-Implants in 6H-SiC
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Deuterium Incorpoation in Acceptor Doped Epitaxial Layers of 6H-SiC
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Silicon Carbide on Insulator Formation by the Smart CUT^® Process
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Delamination of Thin Layers in H⁺ Implanted Silicon Carbide
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Metal Disilicide Contacts to 6H-SiC
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Formation of Tungsten Ohmic Contact on n-Type 6H-SiC by Pulsed Laser Processes
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Laser Alloying for Ohmic Contacts on SiC at Room Temperature
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Thermostable Ohmic Contacts on p-Type SiC
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Ohmic Contacts to p-Type SiC with Improved Thermal Stability
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HomeMaterials Science ForumMaterials Science Forum Vols. 264-268Metal Disilicide Contacts to 6H-SiC

Metal Disilicide Contacts to 6H-SiC

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Periodical:

Materials Science Forum (Volumes 264-268)

Pages:

775-778

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.264-268.775

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Online since:

February 1998

Authors:

J. Kriz, T. Scholz, K. Gottfried, J. Leibelt, C. Kaufmann, T. Gessner

Keywords:

High Temperature Stability, Metal Silicide-SiC Interface, MoSi₂, Ohmic Contact, WSi₂

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© 1998 Trans Tech Publications Ltd. All Rights Reserved

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