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Formation of Tungsten Ohmic Contact on n-Type 6H-SiC by Pulsed Laser Processes

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Periodical:

Materials Science Forum (Volumes 264-268)

Pages:

779-782

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.264-268.779

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Online since:

February 1998

Authors:

Koichi Nakashima, Osamu Eryu, T. Kume, Toshitake Nakata, M. Inoue

Keywords:

Excimer Laser, Laser Ablation, Laser Doping, Ohmic Contact, Silicon Carbide (SiC), Tungsten

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© 1998 Trans Tech Publications Ltd. All Rights Reserved

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