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Paper Titles
Implantation of Al and B Acceptors into Alpha-SiC and pn Junction Diodes
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Electrical Activation of B Implant in 6H-SiC
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Post-Implantation Annealing of Aluminium in 6H-SiC
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The Characterization of SiC Hot-Implanted with Ga +
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Ion Implantation Doping in SiC and its Device Applications
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Hot-Implantation of Phosphorus Ions into 6H-SiC
p.721
Raman, Low Temperature Photoluminescence and Transport Investigation of N-Implanted 6H-SiC
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Investigation of Ion-Impantation Induced Damage in 6H-SiC by RSB/C and PAS
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Analysis of Aluminium Ion Implantation Damage into 6H-SiC Epilayers
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Ion Implantation Doping in SiC and its Device Applications

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Periodical:

Materials Science Forum (Volumes 264-268)

Pages:

717-720

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.264-268.717

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Online since:

February 1998

Authors:

Mulpuri V. Rao, J. Gardner, Arthur H. Edwards, N. Papanicolaou, G. Kelner, O.W. Holland, Mario Ghezzo, James W. Kretchmer

Keywords:

Annealing, Compensation, Diode, Doping, Ion Implantation

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© 1998 Trans Tech Publications Ltd. All Rights Reserved

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