Cross-Sectional Micro-Raman Spectroscopy: A Tool for Structural Investigations of Thin Polytypic SiC Layers
p.661
p.661
A Non-Destructive Technique for High Field Characterization of Gate Insulators in SiC MOS Capacitors
p.665
p.665
Raman Determination of Stresses and Strains in 3C-SiC Films Grown on 6-Inch Si Substrates
p.669
p.669
Conductivity Control of SiC by In-Situ Doping and Ion Implantation
p.675
p.675
Incorporation of the D-Center in SiC Controlled either by Coimplantation of Si/B and C/B or by Site-Competition Epitaxy
p.681
p.681
Coimplantation Effects on the Electrical Properties of Boron and Aluminium Acceptors in 4H-SiC
p.685
p.685
Electrical Characterization of p-Type 6H-SiC Layers Created by C and Al Co-implantation
p.689
p.689
Effects of Al-C Ion-Implantation and Annealing in Epitaxial 6H-SiC Studied by Structural and Optical Techniques
p.693
p.693
Energy Order Effect of Aluminium Multiple Implantation in 6H-SiC
p.697
p.697
Incorporation of the D-Center in SiC Controlled either by Coimplantation of Si/B and C/B or by Site-Competition Epitaxy
Abstract:
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Periodical:
Materials Science Forum (Volumes 264-268)
Pages:
681-684
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Online since:
February 1998
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© 1998 Trans Tech Publications Ltd. All Rights Reserved
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