Incorporation of the D-Center in SiC Controlled either by Coimplantation of Si/B and C/B or by Site-Competition Epitaxy

Abstract:

Article Preview

Info:

Periodical:

Materials Science Forum (Volumes 264-268)

Edited by:

G. Pensl, H. Morkoç, B. Monemar and E. Janzén

Pages:

681-684

DOI:

10.4028/www.scientific.net/MSF.264-268.681

Citation:

T. Frank et al., "Incorporation of the D-Center in SiC Controlled either by Coimplantation of Si/B and C/B or by Site-Competition Epitaxy", Materials Science Forum, Vols. 264-268, pp. 681-684, 1998

Online since:

February 1998

Export:

Price:

$35.00

In order to see related information, you need to Login.