Raman Determination of Stresses and Strains in 3C-SiC Films Grown on 6-Inch Si Substrates

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Periodical:

Materials Science Forum (Volumes 264-268)

Edited by:

G. Pensl, H. Morkoç, B. Monemar and E. Janzén

Pages:

669-674

DOI:

10.4028/www.scientific.net/MSF.264-268.669

Citation:

C. Hagiwara et al., "Raman Determination of Stresses and Strains in 3C-SiC Films Grown on 6-Inch Si Substrates", Materials Science Forum, Vols. 264-268, pp. 669-674, 1998

Online since:

February 1998

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$35.00

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