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HomeMaterials Science ForumMaterials Science Forum Vols. 264-268Conductivity Control of SiC by In-Situ Doping and...

Conductivity Control of SiC by In-Situ Doping and Ion Implantation

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Periodical:

Materials Science Forum (Volumes 264-268)

Pages:

675-680

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.264-268.675

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Online since:

February 1998

Authors:

Tsunenobu Kimoto, A. Itoh, N. Inoue, O. Takemura, T. Yamamoto, T. Nakajima, Hiroyuki Matsunami

Keywords:

Chemical Vapor Deposition (CVD), Conductivity Control, In Situ Impurity Doping, Ion Implantation, pn Junction Diode

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© 1998 Trans Tech Publications Ltd. All Rights Reserved

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