Infrared Reflectance of Extremely Thin AlN Epi-Films Deposited on SiC Substrates
p.649
p.649
Cathodoluminescence of Defect Regions in SiC Epi-Films
p.653
p.653
Contactless Measurement of the Thermal Conductivity of Thin SiC Layers
p.657
p.657
Cross-Sectional Micro-Raman Spectroscopy: A Tool for Structural Investigations of Thin Polytypic SiC Layers
p.661
p.661
A Non-Destructive Technique for High Field Characterization of Gate Insulators in SiC MOS Capacitors
p.665
p.665
Raman Determination of Stresses and Strains in 3C-SiC Films Grown on 6-Inch Si Substrates
p.669
p.669
Conductivity Control of SiC by In-Situ Doping and Ion Implantation
p.675
p.675
Incorporation of the D-Center in SiC Controlled either by Coimplantation of Si/B and C/B or by Site-Competition Epitaxy
p.681
p.681
Coimplantation Effects on the Electrical Properties of Boron and Aluminium Acceptors in 4H-SiC
p.685
p.685
A Non-Destructive Technique for High Field Characterization of Gate Insulators in SiC MOS Capacitors
Abstract:
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Periodical:
Materials Science Forum (Volumes 264-268)
Pages:
665-668
Citation:
Online since:
February 1998
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© 1998 Trans Tech Publications Ltd. All Rights Reserved
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