A Non-Destructive Technique for High Field Characterization of Gate Insulators in SiC MOS Capacitors

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Periodical:

Materials Science Forum (Volumes 264-268)

Edited by:

G. Pensl, H. Morkoç, B. Monemar and E. Janzén

Pages:

665-668

DOI:

10.4028/www.scientific.net/MSF.264-268.665

Citation:

V. Madangarli and T. S. Sudarshan, "A Non-Destructive Technique for High Field Characterization of Gate Insulators in SiC MOS Capacitors", Materials Science Forum, Vols. 264-268, pp. 665-668, 1998

Online since:

February 1998

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$35.00

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