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Coimplantation Effects on the Electrical Properties of Boron and Aluminium Acceptors in 4H-SiC
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HomeMaterials Science ForumMaterials Science Forum Vols. 264-268Electrical Characterization of p-Type 6H-SiC...

Electrical Characterization of p-Type 6H-SiC Layers Created by C and Al Co-implantation

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Periodical:

Materials Science Forum (Volumes 264-268)

Pages:

689-692

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.264-268.689

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Online since:

February 1998

Authors:

Kiyoshi Tone, S.R. Weiner, Jian Hui Zhao

Keywords:

Aluminum (Al), C, Hall-Effect Measurement, Hole Concentration, Ion Implantation, p-Type Doping, Sheet Resistivity, Silicon Carbide (SiC), Specific Contact Resistance, Transfer Length Method

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© 1998 Trans Tech Publications Ltd. All Rights Reserved

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