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HomeMaterials Science ForumMaterials Science Forum Vols. 264-268

Materials Science Forum Vols. 264-268

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.264-268

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Table of Contents

Paper Title Page

Deformation of Monocrystalline 6H-SiC

Authors: A.V. Samant, W.L. Zhou, P. Pirouz

627

Measurement of the Thermal Conductivity of Thin β-SiC Films between 80 K and 600 K

Authors: E. Jansen, R. Ziermann, E. Obermeier, G. Krötz, Ch. Wagner

631

Spatial Uniformity of the Mechanical Properties of 3C-SiC Films Grown on 4-Inch Si Wafers as a Function of Film Growth Conditions

Authors: K. Chandra, Christian A. Zorman, Mehran Mehregany

635

The Measurement of the Thickness of Thin SiC Layers on Silicon

Authors: Volker Cimalla, J. Scheiner, Gernot Ecke, M. Friedrich, R. Goldhahn, D.R.T. Zahn, Joerg Pezoldt

641

Thickness Contour Mapping of SiC Epi-Films on SiC Substrates

Authors: Mike F. MacMillan, P.O. Narfgren, Anne Henry, Erik Janzén

645

Infrared Reflectance of Extremely Thin AlN Epi-Films Deposited on SiC Substrates

Authors: Mike F. MacMillan, Urban Forsberg, P.O.Å. Persson, L. Hultman, Erik Janzén

649

Cathodoluminescence of Defect Regions in SiC Epi-Films

Authors: Mike F. MacMillan, L. Hultman, Christer Hallin, Ivan G. Ivanov, Anne Henry, Erik Janzén, S.A. Galloway

653

Contactless Measurement of the Thermal Conductivity of Thin SiC Layers

Authors: S. Rohmfeld, Martin Hundhausen, Lothar Ley

657

Cross-Sectional Micro-Raman Spectroscopy: A Tool for Structural Investigations of Thin Polytypic SiC Layers

Authors: T. Werninghaus, D.R.T. Zahn, R.A. Yankov, A. Mücklich, Joerg Pezoldt

661

A Non-Destructive Technique for High Field Characterization of Gate Insulators in SiC MOS Capacitors

Authors: V. Madangarli, Tangali S. Sudarshan

665