Volumes

Materials Science Forum
Vols. 284-286

Materials Science Forum
Vols. 282-283

Materials Science Forum
Vols. 278-281

Materials Science Forum
Vols. 276-277

Materials Science Forum
Vols. 273-275

Materials Science Forum
Vols. 269-272

Materials Science Forum
Vols. 264-268

Materials Science Forum
Vols. 258-263

Materials Science Forum
Vols. 255-257

Materials Science Forum
Vols. 251-254

Materials Science Forum
Vol. 250

Materials Science Forum
Vols. 248-249

Materials Science Forum
Vol. 247

HomeMaterials Science ForumMaterials Science Forum Vols. 264-268

Materials Science Forum Vols. 264-268

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.264-268

Export:

ToC:

Table of Contents

Paper Title Page

Luminescence Properties of Er Implanted Polycrystalline 3C SiC

Authors: S. Uekusa, K. Awahara, Mikito Kumagai

505

Measurement of High Field Electron Transport in Silicon Carbide

Authors: I.A. Khan, James A. Cooper

509

Ionization Rates and Critical Fields in 4H SiC Junction Devices

Authors: Andrey O. Konstantinov, Qamar-ul Wahab, Nils Nordell, Ulf Lindefelt

513

Measurement of the Hall Scattering Factor in 4H SiC Epilayers from 40K to 290K and up to Magnetic Fields of Nine Tesla

Authors: G. Rutsch, Robert P. Devaty, D.W. Langer, L.B. Rowland, Wolfgang J. Choyke

517

Electrical Conductivity of Single-Crystalline Bulk 6H-SiC and Epitaxial Layers of AlN in the Temperature Range 300-2300 K

521

Monitory Carrier Lifetime Measurements in 6H-SiC Using the Photoconductive Decay Technique

525

Depth- and Time-Resolved Free Carrier Absorption in 4H SiC Epilayers: A Study of Carrier Recombination and Transport Parameters

Authors: Vytautas Grivickas, Jan Linnros, Augustinas Galeckas

529

Evaluation of Auger Recombination Rate in 4H-SiC

Authors: Augustinas Galeckas, Jan Linnros, Vytautas Grivickas, Ulf Lindefelt, Christer Hallin

533

Ground States of the Ionized Isoelectronic Ti Acceptor in SiC

Authors: T. Dalibor, Gerhard Pensl, Nils Nordell, Adolf Schöner, Wolfgang J. Choyke

537

Radiotracer Identification of Ti, V and Cr Band Gap States in 4H- and 6H-SiC

Authors: N. Achtziger, Joachim Grillenberger, W. Witthuhn

541