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HomeMaterials Science ForumMaterials Science Forum Vols. 264-268

Materials Science Forum Vols. 264-268

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.264-268

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Paper Title Page

Phosphorus Four Particle Donor Bound Exciton Complex in 6H SiC

Authors: S.G. Sridhara, L.L. Clemen, D.G. Nizhner, Wolfgang J. Choyke, Robert P. Devaty, David J. Larkin

465

Some Aspects of the Photoluminescence and Raman Spectroscopy of (10-10)- and (11-20)-Oriented 4H and 6H Silicon Carbide

Authors: Ivan G. Ivanov, Christer Hallin, T. Egilsson, Anne Henry, Erik Janzén

469

The Neutral Silicon Vacancy in 6H and 4H SiC

Authors: E. Sörman, W.M. Chen, Nguyen Tien Son, Christer Hallin, J. Lennart Lindström, Bo Monemar, Erik Janzén

473

Bound Exciton Recombination in Electron Irradiated 4H-SiC

Authors: T. Egilsson, Anne Henry, Ivan G. Ivanov, J. Lennart Lindström, Erik Janzén

477

Characterization of Deep Levels in SiC by Photoluminescence Spectroscopy and Mapping

Authors: Michio Tajima, Y. Kumagaya, Toshitake Nakata, M. Inoue, A. Nakamura

481

Time Resolved PL Study of Multi Bound Excitons in 3C SiC

Authors: Peder Bergman, Erik Janzén, S.G. Sridhara, Wolfgang J. Choyke

485

Changes in the Exciton-Related Photoluminescence of 4H- and 6H-SiC Induced by Uniaxial Stress

Authors: Ivan G. Ivanov, Ulf Lindefelt, Anne Henry, T. Egilsson, Olof Kordina, Erik Janzén

489

D_II Revisited in an Modern Guise - 6H and 4H SiC

Authors: S.G. Sridhara, D.G. Nizhner, Robert P. Devaty, Wolfgang J. Choyke, T. Dalibor, Gerhard Pensl, Tsunenobu Kimoto

493

Near Band-Gap Emission in V-Implanted and Annealed 4H-SiC

Authors: Anne Henry, T. Egilsson, Ivan G. Ivanov, Chris I. Harris, Susan Savage, Erik Janzén

497

Photoluminescence and Backscattering Characterization of 6H SiC Implanted with Erbium and Oxygen Ions

Authors: A. Kozanecki, C. Jeynes, Brian J. Sealy, W. Jantsch, S. Lanzerstorfer, W. Heiß, G. Prechtl

501