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HomeMaterials Science ForumMaterials Science Forum Vols. 264-268Characterization of Deep Levels in SiC by...

Characterization of Deep Levels in SiC by Photoluminescence Spectroscopy and Mapping

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Periodical:

Materials Science Forum (Volumes 264-268)

Pages:

481-484

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.264-268.481

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Online since:

February 1998

Authors:

Michio Tajima, Y. Kumagaya, Toshitake Nakata, M. Inoue, A. Nakamura

Keywords:

Deep Level, Defect, Gettering, Mapping, Photoluminescence (PL), Vanadium

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© 1998 Trans Tech Publications Ltd. All Rights Reserved

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