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Paper Titles
Boron Four Particle Acceptor Bound Exciton Complex in 4H SiC
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Phosphorus Four Particle Donor Bound Exciton Complex in 6H SiC
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Some Aspects of the Photoluminescence and Raman Spectroscopy of (10-10)- and (11-20)-Oriented 4H and 6H Silicon Carbide
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The Neutral Silicon Vacancy in 6H and 4H SiC
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Bound Exciton Recombination in Electron Irradiated 4H-SiC
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Characterization of Deep Levels in SiC by Photoluminescence Spectroscopy and Mapping
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Time Resolved PL Study of Multi Bound Excitons in 3C SiC
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Changes in the Exciton-Related Photoluminescence of 4H- and 6H-SiC Induced by Uniaxial Stress
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DII Revisited in an Modern Guise - 6H and 4H SiC
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Bound Exciton Recombination in Electron Irradiated 4H-SiC

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Periodical:

Materials Science Forum (Volumes 264-268)

Pages:

477-480

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.264-268.477

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Online since:

February 1998

Authors:

T. Egilsson, Anne Henry, Ivan G. Ivanov, J. Lennart Lindström, Erik Janzén

Keywords:

Photoluminescence (PL), Radiation Damage

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© 1998 Trans Tech Publications Ltd. All Rights Reserved

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