For Libraries For Publication Open Access Downloads About Us Contact Us
Paper Titles
Site Identification of 6H-SiC Using RBS/Channeling Technique
p.441
Structural Characterization of 3C-SiC Epitaxially Grown on Si-On-Insulator
p.445
Electronic Properties of Doped SiC at Elevated Temperatures Studied by Raman Scattering
p.449
Optical Properties of Silicon Carbide: Some Recent Developments
p.455
Boron Four Particle Acceptor Bound Exciton Complex in 4H SiC
p.461
Phosphorus Four Particle Donor Bound Exciton Complex in 6H SiC
p.465
Some Aspects of the Photoluminescence and Raman Spectroscopy of (10-10)- and (11-20)-Oriented 4H and 6H Silicon Carbide
p.469
The Neutral Silicon Vacancy in 6H and 4H SiC
p.473
Bound Exciton Recombination in Electron Irradiated 4H-SiC
p.477

Boron Four Particle Acceptor Bound Exciton Complex in 4H SiC

Article Preview

Abstract:

You might also be interested in these eBooks
Silicon Carbide, III-Nitrides and Related Materials View Preview

Info:

Periodical:

Materials Science Forum (Volumes 264-268)

Pages:

461-464

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.264-268.461

Citation:

Cite this paper

Online since:

February 1998

Authors:

S.G. Sridhara, D.G. Nizhner, Robert P. Devaty, Wolfgang J. Choyke, T. Troffer, Gerhard Pensl, David J. Larkin, H.S. Kong

Keywords:

Boron, Bound Exciton, Four Particle Complex

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

© 1998 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation:

References

This article has no references.

© 2025 Trans Tech Publications Ltd. All rights are reserved, including those for text and data mining, AI training, and similar technologies. For open access content, terms of the Creative Commons licensing CC-BY are applied.
Scientific.Net is a registered trademark of Trans Tech Publications Ltd.