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HomeMaterials Science ForumMaterials Science Forum Vols. 264-268Structural Characterization of 3C-SiC Epitaxially...

Structural Characterization of 3C-SiC Epitaxially Grown on Si-On-Insulator

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Periodical:

Materials Science Forum (Volumes 264-268)

Pages:

445-448

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.264-268.445

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Online since:

February 1998

Authors:

V. Papaioannou, Eleni Pavlidou, J. Stoemenos, W. Reichelt, E. Obermeier

Keywords:

Cavities, Epitaxial Growth of 3C-SiC

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© 1998 Trans Tech Publications Ltd. All Rights Reserved

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