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Structural Characterization of SiC Crystals Grown by Physical Vapor Transport
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HomeMaterials Science ForumMaterials Science Forum Vols. 264-268Structural Characterization of SiC Crystals Grown...

Structural Characterization of SiC Crystals Grown by Physical Vapor Transport

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Periodical:

Materials Science Forum (Volumes 264-268)

Pages:

433-436

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.264-268.433

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Online since:

February 1998

Authors:

Edward M. Sanchez, V.D. Heydemann, Gregory S. Rohrer, Marek Skowronski, J. Solomon, Michael A. Capano, W.C. Mitchel

Keywords:

Dislocation, Extended Defects, Inclusion, Silicon Carbide (SiC)

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© 1998 Trans Tech Publications Ltd. All Rights Reserved

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